Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

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I-V characteristics of TiON films prepared via (a) single-step and (b)

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The O 1s spectra of Al2O3. XPS O 1s peak in Al2O3 made with (a) 0.01

C-V curves and schematic images for the transport of electron in each

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

XPS results at different depths for two kinds of TiON film prepared via

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Residual oxygen driven defect mediated room temperature magnetism in dilute nitrogen incorporated amorphous Al-N-O alloy thin film - ScienceDirect

Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure. - Abstract - Europe PMC

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Schematic diagrams of the resistive switching mechanisms for TiON films